The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

“Our work demonstrates that high-performance, stable solar water splitting can be achieved using low-cost, scalable organic materials,” said Flurin Eisner, Lecturer in Green Energy at Queen Mary ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

One promising application for chiral semiconductors is in display technology. Current displays often waste a significant ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...

Compound Semiconductor™ is an Angel Business Communications publication.

Innovative companies often have a rich history. Founded by Ernst Leybold in Cologne in 1850, the German vacuum specialist ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

However, there is steady improvement in the orange, yellow and red, with a key milestone reached in 2014, thanks to research ...

Three candidates have come forward to purchase the BelGaN chip manufacturing site in Oudenaarde, Belgium. Two of the bidders ...