GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging called X.PAK.

Researchers from the National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Oak Ridge National ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, ...

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS (on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device ...