The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The OptiMOS TDM2454xx modules are a fusion of Infineon's robust OptiMOS 6 trench technology, chip-embedded package for superior electrical and thermal efficiencies, and innovative low-profile magnetic ...

By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS (on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device ...

Keysight Technologies has added its double-pulse test portfolio enabling customers to benefit from accurate and easy measurement of the dynamic characteristics of wide-bandgap (WBG) power ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

Three candidates have come forward to purchase the BelGaN chip manufacturing site in Oudenaarde, Belgium. Two of the bidders are from Asia and one is from Europe, according to an ...